Physical properties of amorphous Mo-doped In-Ga-Zn-O films grown by magnetron co-sputtering technique

Shiu Jen Liu*, Hau Wei Fang, Jang Hsing Hsieh, Jenh Yih Juang

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

9 引文 斯高帕斯(Scopus)

摘要

Amorphous thin films of In-Ga-Zn-O (a-IGZO) doped with Mo have been fabricated by using magnetron co-sputtering technique. The Mo concentration in a-IGZO films was modulated by varying the sputtering power applied on the Mo target. The electrical, optical and magnetic properties of Mo-doped a-IGZO films grown on glasses were investigated. The carrier density and mobility of a-IGZO films can be remarkably enhanced by low concentration Mo doping. On the other hand, the optical bandgap of a-IGZO films is not significantly affected by Mo doping. However, the transmission is decreased with increasing the Mo doping. Moreover, all Mo-doped films exhibit room-temperature ferromagnetism.

原文英語
頁(從 - 到)1568-1571
頁數4
期刊Materials Research Bulletin
47
發行號6
DOIs
出版狀態已發佈 - 2012 六月

ASJC Scopus subject areas

  • 材料科學(全部)
  • 凝聚態物理學
  • 材料力學
  • 機械工業

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