Physical Modeling of p-Type Fluorinated Al-Doped Tin-Oxide Thin Film Transistors

Kadiyam Rajshekar, Hsiao Hsuan Hsu, Koppolu Uma Mahendra Kumar, P. Sathyanarayanan, V. Velmurugan, Chun Hu Cheng, D. Kannadassan*

*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

8 引文 斯高帕斯（Scopus）

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Material Science

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