摘要
Fabrication, physical modeling and dynamic response of p -type Al-doped SnOx active channel thin film transistors (TFTs) are presented for the potential application of ultra-high definition (UHD) displays. After deposition of Al-doped SnOx active layer using reactive co-sputtering, the channel was treated with plasma fluorination which improve the device performance of high I{ON}/I{OFF} ratio of > 106, low subthreshold swing of 100 mV/dec and high field-effect mobility ( μ {FE}) of 4.8 cm{2}V{-1}s{-1}. To understand the origin of such high performance, physical modeling and numerical simulations were performed using density of state (DOS) model of defects/traps of oxide semiconductor. This model describes the modifications of donor-like tail states and acceptor-like Gaussian defect states due to Al doping on SnOx and fluorine treatment. To evaluate the device performance for UHD large scale displays, the dynamic responses of p -type TFT pixel circuit for various requirements are simulated with physical models. These results suggest that the Al-doped SnOx TFTs are potential candidates for future high-definition displays and many applications in transparent electronics.
原文 | 英語 |
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文章編號 | 9173540 |
頁(從 - 到) | 948-958 |
頁數 | 11 |
期刊 | IEEE Journal of the Electron Devices Society |
卷 | 8 |
DOIs | |
出版狀態 | 已發佈 - 2020 |
ASJC Scopus subject areas
- 生物技術
- 電子、光磁材料
- 電氣與電子工程