Physical and electrical properties of Ti-doped Er2 O3 films for high-k gate dielectrics

Chuan Hsi Liu; Tung Ming Pan; Wei Hao Shu; Kuo Chan Huang

doi:10.1149/1.2742497

Physical and electrical properties of Ti-doped Er2 O3 films for high-k gate dielectrics

Chuan Hsi Liu^*, Tung Ming Pan, Wei Hao Shu, Kuo Chan Huang

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

10 引文斯高帕斯（Scopus）

摘要

Titanium-doped erbium oxide films on Si(100) have been investigated as an alternative gate dielectric. The dielectric films were characterized by X-ray photoelectron spectroscopy, atomic force microscopy, and electrical measurements. We found that the addition of Ti into Er2 O3 film after annealing at 700°C can reduce the SiOx formation at the interfacial layer and thus reduce the O diffusion during the film postthermal annealing process. Such suppression effect significantly improved the electrical properties of the dielectric films.

原文	英語
頁（從 - 到）	G54-G57
期刊	Electrochemical and Solid-State Letters
卷	10
發行號	8
DOIs	https://doi.org/10.1149/1.2742497
出版狀態	已發佈 - 2007
對外發佈	是

ASJC Scopus subject areas

一般化學工程
一般材料科學
物理與理論化學
電化學
電氣與電子工程

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AB - Titanium-doped erbium oxide films on Si(100) have been investigated as an alternative gate dielectric. The dielectric films were characterized by X-ray photoelectron spectroscopy, atomic force microscopy, and electrical measurements. We found that the addition of Ti into Er2 O3 film after annealing at 700°C can reduce the SiOx formation at the interfacial layer and thus reduce the O diffusion during the film postthermal annealing process. Such suppression effect significantly improved the electrical properties of the dielectric films.

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Physical and electrical properties of Ti-doped Er2 O3 films for high-k gate dielectrics

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