Photoreflectance study of GaAs/Al 0.3 Ga 0.7 As resonant asymmetric double quantum wells with Si δ-doping in side barriers

C. R. Lu*, S. K. Du, J. R. Anderson, D. R. Stone, R. A. Wilson

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

1 引文 斯高帕斯(Scopus)

摘要

The electro-optical properties of GaAs/Al 0.3 Ga 0.7 As resonant asymmetric double quantum wells with Si δ-doping in side barriers have been investigated by photoreflectance spectroscopy from 20 K to room temperature. The modulated reflectance spectra consist of Franz-Keldysh oscillations above the Al 0.3 Ga 0.7 As band gap, and various excitonic transition features of the quantum well system above the GaAs band edge. The first and the second excitonic transitions are weak and broadened due to the subband filling effect. The third excitonic transition has the strongest optical response, and we believe this is due to the resonance between the narrow well and the wide well subbands. The enhancement of the modulated reflectance signal, ΔR/R, at about 50 K also agrees with the subband resonance model.

原文英語
頁(從 - 到)543-546
頁數4
期刊Applied Surface Science
92
DOIs
出版狀態已發佈 - 1996 二月

ASJC Scopus subject areas

  • 化學 (全部)
  • 凝聚態物理學
  • 物理與天文學 (全部)
  • 表面和介面
  • 表面、塗料和薄膜

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