Photoreflectance lineshape analysis of the selectively-doped GaAs/Al_0.3Ga_0.7As microstructure

INIS

• microstructure 100%
• spectra 100%
• doped materials 100%
• gallium arsenides 100%
• layers 60%
• electric fields 40%
• surfaces 20%
• depth 20%
• interfaces 20%
• dielectrics 20%
• space charge 20%
• photons 20%
• bending 20%

Chemistry

• Microstructure 100%
• Spectra 100%
• Lineshape 100%
• Electric Field 40%
• Surface 20%
• Reaction Temperature 20%
• Dielectric Function 20%
• Space Charge 20%
• Band Bending 20%

Physics

• Spectra 100%
• Gaps 40%
• Electric Fields 40%
• Model 20%
• Temperature 20%
• Dielectrics 20%
• Region 20%
• Magnitude 20%
• Space Charge 20%
• Photons 20%
• Reflectance 20%