Photoluminescence study on threading dislocation in GaN revealed by selective photoelectrochemical etching

J. T. Hsieh*, J. M. Hwang, H. L. Hwang, J. K. Ho, C. N. Huang, C. Y. Chen, W. H. Hung

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

6 引文 斯高帕斯(Scopus)

摘要

Selective etching was studied between the crystalline GaN and its dislocations by controlling the KOH concentration and the ultraviolet photon intensity in photoelectrochemical (PEC) etching. The PEC etching rate of GaN is governed by the density of photo-generated carriers and the direct chemical reaction between GaN and the electrolyte. The dislocation is more chemically reactive than crystalline GaN, whereas crystalline GaN has a higher density of the photogenerated minority carrier than the threading dislocation. By using the selective etching method, the origin of photoluminescence (PL) from the near bandedge of crystalline GaN and dislocations could be clarified. The room-temperature PL peak at 3.41 eV is due to the emission from the crystalline GaN and the peak at 3.35 eV is attributed to the threading dislocation.

原文英語
頁(從 - 到)395-398
頁數4
期刊Electrochemical and Solid-State Letters
3
發行號8
DOIs
出版狀態已發佈 - 2000 八月
對外發佈

ASJC Scopus subject areas

  • 化學工程 (全部)
  • 材料科學(全部)
  • 物理與理論化學
  • 電化學
  • 電氣與電子工程

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