Photoluminescence characteristics of low indium composition InGaN thin films grown on sapphire by metalorganic chemical vapor deposition

Z. C. Feng*, W. Liu, S. J. Chua, J. W. Yu, C. C. Yang, T. R. Yang, J. Zhao

*此作品的通信作者

研究成果: 雜誌貢獻會議論文同行評審

11 引文 斯高帕斯(Scopus)

摘要

The wavelength shifts in the photoluminescence (PL) from low indium composition (∼ 3%) InGaN epitaxial thin films, grown on sapphire substrates by metalorganic chemical vapour deposition, has been studied by a combination of experiment and theory. As temperature increases from 6 K, the PL peak energy red-shifts very slightly first, then blue-shifts to reach a maximum at near 100 K, and red-shifts again till room temperature. This unique PL behaviour, indicating the existence of the phase separation, is interpreted qualitatively from the spatial variation of band structure due to the In-compositional fluctuation. Theoretical calculation, based upon a model involving the band-tail states in the radiative recombination, explains the experimental data successfully.

原文英語
頁(從 - 到)118-122
頁數5
期刊Thin Solid Films
498
發行號1-2
DOIs
出版狀態已發佈 - 2006 三月 1
事件Proceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD -
持續時間: 2004 十一月 122004 十一月 14

ASJC Scopus subject areas

  • 電子、光磁材料
  • 表面和介面
  • 表面、塗料和薄膜
  • 金屬和合金
  • 材料化學

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