Photoluminescence and Raman studies of nanocrystalline silicon enclosed in a SiO 2 shell

Te Yu Chien, Chi-Ta Chia, Tse Chi Lin, Si Chen Lee

研究成果: 雜誌貢獻文章

2 引文 (Scopus)

摘要

Spherical silicon-nanocrystals prepared by the thermal evaporation method were examined using Raman and photoluminescence measurements. The Raman analysis indicates that the content of the crystalline silicon decayed exponentially over time, which explains the reduction in size of the silicon-nanocrystals caused by oxidation. The visible photoluminescence spectra of silicon-nanocrystals are about the same. Although the size of the samples varied significantly, the temporal variation of the photoluminescence spectra was negligible, except for the very first day when samples were taken out from the growth chamber. Based on the Raman and photoluminescence results, we conclude that the red photoluminescence of silicon-nanocrystals near 680 nm is mainly attributed to defect states residing at the Si/SiO 2 interfaces.

原文英語
頁(從 - 到)91-97
頁數7
期刊Chinese Journal of Physics
46
發行號1
出版狀態已發佈 - 2008 二月 1

指紋

photoluminescence
nanocrystals
silicon
phytotrons
evaporation
oxidation
defects

ASJC Scopus subject areas

  • Physics and Astronomy(all)

引用此文

Photoluminescence and Raman studies of nanocrystalline silicon enclosed in a SiO 2 shell . / Chien, Te Yu; Chia, Chi-Ta; Lin, Tse Chi; Lee, Si Chen.

於: Chinese Journal of Physics, 卷 46, 編號 1, 01.02.2008, p. 91-97.

研究成果: 雜誌貢獻文章

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