Photoemission assignments of HxSiO4-x fragments at the Si/SiOx interface

Sunghee Lee, Mark M. Banaszak Holl, Wei-Hsiu Hung, F. R. McFeely

研究成果: 雜誌貢獻文章

7 引文 斯高帕斯(Scopus)

摘要

Hydrogenation of the silicon/silicon oxide interface is shown to cause changes in every feature spectroscopically discernible by soft x-ray photoemission in addition to depinning the Fermi level. A new feature is observed to grow in at 3.6 eV with respect to bulk Si upon exposure to atomic hydrogen at the expense of interface states intermediate between 3.6 and 0 eV. Assignments of photoemission features are discussed in the context of previous model studies of the interface and issues of electronic versus chemical reversibility are discussed.

原文英語
頁(從 - 到)1081-1083
頁數3
期刊Applied Physics Letters
68
發行號8
DOIs
出版狀態已發佈 - 1996 十二月 1

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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