摘要
Hydrogenation of the silicon/silicon oxide interface is shown to cause changes in every feature spectroscopically discernible by soft x-ray photoemission in addition to depinning the Fermi level. A new feature is observed to grow in at 3.6 eV with respect to bulk Si upon exposure to atomic hydrogen at the expense of interface states intermediate between 3.6 and 0 eV. Assignments of photoemission features are discussed in the context of previous model studies of the interface and issues of electronic versus chemical reversibility are discussed.
原文 | 英語 |
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頁(從 - 到) | 1081 |
頁數 | 1 |
期刊 | Applied Physics Letters |
出版狀態 | 已發佈 - 1995 |
對外發佈 | 是 |
ASJC Scopus subject areas
- 物理與天文學(雜項)