Photoemission assignments of HxSiO4-x fragments at the Si/SiOx interface

Sunghee Lee*, Mark M. Banaszak Holl, Wei Hsiu Hung, F. R. McFeely


研究成果: 雜誌貢獻期刊論文同行評審


Hydrogenation of the silicon/silicon oxide interface is shown to cause changes in every feature spectroscopically discernible by soft x-ray photoemission in addition to depinning the Fermi level. A new feature is observed to grow in at 3.6 eV with respect to bulk Si upon exposure to atomic hydrogen at the expense of interface states intermediate between 3.6 and 0 eV. Assignments of photoemission features are discussed in the context of previous model studies of the interface and issues of electronic versus chemical reversibility are discussed.

頁(從 - 到)1081
期刊Applied Physics Letters
出版狀態已發佈 - 1995

ASJC Scopus subject areas

  • 物理與天文學(雜項)


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