摘要
In a preliminary report, the authors described the photoelectrochemical production of fluorine from anhydrous hydrogen fluoride solutions using single-crystal TiO2 electrodes. It was found that fluorine doping substantially enhanced the stability of n-TiO2 photoelectrodes in HF/NaF. They now report a fuller characterization of these effects and a study of the energetics of the semiconductor/fluoride-containing solution interface by ac impedance techniques. This study reveals an extremely low density of midgap surface states, which allows the electrode to develop a large open circuit photovoltage and to evolve fluorine efficiently, and without substantial photoanodic corrosion, from anhydrous hydrogen fluoride solutions. This same low density of surface states, and a shift of the valence band-edge to more negative potentials, gives rise to a complete lack of photoactivity in fluoride-containing acetonitrile solutions.
原文 | 英語 |
---|---|
頁(從 - 到) | 423-428 |
頁數 | 6 |
期刊 | Journal of physical chemistry |
卷 | 94 |
發行號 | 1 |
DOIs | |
出版狀態 | 已發佈 - 1990 |
對外發佈 | 是 |
ASJC Scopus subject areas
- 工程 (全部)
- 物理與理論化學