Photoelectrochemical etching of InxGa1-xN

J. M. Hwang*, J. T. Hsieh, C. Y. Ko, H. L. Hwang, W. H. Hung

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

10 引文 斯高帕斯(Scopus)

摘要

Photoelectrochemical (PEC) etching of InxGa1-xN in the KOH solution under illumination of a Hg-arc lamp is studied. An indium oxide surface layer is formed during PEC etching, which slows down the etching rate. The PEC etch rate of InxGa1-xN is determined by dissolution of indium oxides into the solution. Increase of the solution temperature results in an increase of solubility of indium oxides and thus enhances the PEC etch rate. It is found that stirring the solution can accelerate indium oxides to dissolve into the solution and increase the etch rate. The thick indium oxide layer on the PEC-etched InxGa1-xN surface can be effectively removed by the treatment of using a hot 6N HCl solution. A post-treatment by using a 3.2 M KOH solution can provide a smooth sidewall on the PEC-etched surface for the potential application to laser cavity.

原文英語
頁(從 - 到)3917-3919
頁數3
期刊Applied Physics Letters
76
發行號26
DOIs
出版狀態已發佈 - 2000 六月 26

ASJC Scopus subject areas

  • 物理與天文學(雜項)

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