Photoabsorption study of the electronic structures of Ni3Al, Ni3Ga, Ni3In, and Ni13In9

Li Shing Hsu; Y. K. Wang; Y. L. Tai; J. F. Lee

doi:10.1016/j.jallcom.2005.06.065

Photoabsorption study of the electronic structures of Ni₃Al, Ni₃Ga, Ni₃In, and Ni₁₃In₉

Li Shing Hsu^*, Y. K. Wang, Y. L. Tai, J. F. Lee

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

7 引文斯高帕斯（Scopus）

摘要

X-ray absorption near-edge spectroscopy (XANES) spectra at the Ni K-, In L₃-, and In K-edge of Ni₃In and Ni₁₃In ₉ are presented and compared with theoretical XANES spectra and site- and momentum-decomposed partial density of states derived from first-principles calculation. The agreement between theory and experiment is better for Ni ₃In than for Ni₁₃In₉. Extended X-ray absorption fine structure spectra of Ni₃Al, Ni₃Ga, Ni₃In, and Ni₁₃In₉ are also analyzed to yield the bonding parameters.

原文	英語
頁（從 - 到）	11-16
頁數	6
期刊	Journal of Alloys and Compounds
卷	413
發行號	1-2
DOIs	https://doi.org/10.1016/j.jallcom.2005.06.065
出版狀態	已發佈 - 2006 3月 9
對外發佈	是

ASJC Scopus subject areas

材料力學
機械工業
金屬和合金
材料化學

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10.1016/j.jallcom.2005.06.065

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@article{75fd99f7377b41e6858c66d29324f34e,

title = "Photoabsorption study of the electronic structures of Ni3Al, Ni3Ga, Ni3In, and Ni13In9",

abstract = "X-ray absorption near-edge spectroscopy (XANES) spectra at the Ni K-, In L3-, and In K-edge of Ni3In and Ni13In 9 are presented and compared with theoretical XANES spectra and site- and momentum-decomposed partial density of states derived from first-principles calculation. The agreement between theory and experiment is better for Ni 3In than for Ni13In9. Extended X-ray absorption fine structure spectra of Ni3Al, Ni3Ga, Ni3In, and Ni13In9 are also analyzed to yield the bonding parameters.",

keywords = "Electronic structure, Ni-In compounds, Photoabsorption",

author = "Hsu, {Li Shing} and Wang, {Y. K.} and Tai, {Y. L.} and Lee, {J. F.}",

note = "Funding Information: We acknowledge Prof. G.-Y. Guo for calculation assistance and support from the National Science Council, Taiwan.",

year = "2006",

month = mar,

day = "9",

doi = "10.1016/j.jallcom.2005.06.065",

language = "English",

volume = "413",

pages = "11--16",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

publisher = "Elsevier BV",

number = "1-2",

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TY - JOUR

T1 - Photoabsorption study of the electronic structures of Ni3Al, Ni3Ga, Ni3In, and Ni13In9

AU - Hsu, Li Shing

AU - Wang, Y. K.

AU - Tai, Y. L.

AU - Lee, J. F.

N1 - Funding Information: We acknowledge Prof. G.-Y. Guo for calculation assistance and support from the National Science Council, Taiwan.

PY - 2006/3/9

Y1 - 2006/3/9

N2 - X-ray absorption near-edge spectroscopy (XANES) spectra at the Ni K-, In L3-, and In K-edge of Ni3In and Ni13In 9 are presented and compared with theoretical XANES spectra and site- and momentum-decomposed partial density of states derived from first-principles calculation. The agreement between theory and experiment is better for Ni 3In than for Ni13In9. Extended X-ray absorption fine structure spectra of Ni3Al, Ni3Ga, Ni3In, and Ni13In9 are also analyzed to yield the bonding parameters.

AB - X-ray absorption near-edge spectroscopy (XANES) spectra at the Ni K-, In L3-, and In K-edge of Ni3In and Ni13In 9 are presented and compared with theoretical XANES spectra and site- and momentum-decomposed partial density of states derived from first-principles calculation. The agreement between theory and experiment is better for Ni 3In than for Ni13In9. Extended X-ray absorption fine structure spectra of Ni3Al, Ni3Ga, Ni3In, and Ni13In9 are also analyzed to yield the bonding parameters.

KW - Electronic structure

KW - Ni-In compounds

KW - Photoabsorption

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U2 - 10.1016/j.jallcom.2005.06.065

DO - 10.1016/j.jallcom.2005.06.065

M3 - Article

AN - SCOPUS:32844457757

SN - 0925-8388

VL - 413

SP - 11

EP - 16

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

IS - 1-2

ER -

Photoabsorption study of the electronic structures of Ni3Al, Ni3Ga, Ni3In, and Ni13In9

摘要

ASJC Scopus subject areas

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Photoabsorption study of the electronic structures of Ni₃Al, Ni₃Ga, Ni₃In, and Ni₁₃In₉