Phase separation in Zn-doped InGaN grown by metalorganic chemical vapor deposition

Z. C. Feng*, T. R. Yang, R. Liu, T. S.A. Wee


研究成果: 雜誌貢獻期刊論文同行評審

7 引文 斯高帕斯(Scopus)


Zn-doped InGaN thin films were deposited on GaN/sapphire by metalorganic chemical vapor deposition, and studied by a combination of high-resolution X-ray diffraction (HR-XRD), micro-photoluminescence (PL) and secondary ion mass spectrometry (SIMS). Indium phase separation is studied comparatively. HR-XRD exhibits a GaN band and a single band from InGaN for samples without phase separation, but two InGaN bands corresponding to different x(In) for samples with phase separation. PL excitation power dependence measurements reveal 2 sets of InGaN PL emissions for samples with phase separation, but only 1 set for samples without phase separation. SIMS data showed that phase separated InGaN:Zn films possess a high Zn concentration near the InGaN-GaN interface and non-uniform distributions of In and Zn contents, which are in contrast with data from InGaN:Zn films with no In-phase separation.

頁(從 - 到)39-43
期刊Materials Science in Semiconductor Processing
出版狀態已發佈 - 2002 2月

ASJC Scopus subject areas

  • 材料科學(全部)
  • 凝聚態物理學
  • 材料力學
  • 機械工業


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