Persistent photoconductivity in InGaN/GaN multiquantum wells

H. C. Yang, T. Y. Lin, Y. F. Chen

研究成果: 雜誌貢獻文章同行評審

32 引文 斯高帕斯(Scopus)

摘要

Optical properties of undoped InGaN/GaN multiquantum wells (MQWs) have been investigated by photoconductivity, photoluminescence, and photoluminescence excitation measurements. We report the observation of persistent photoconductivity (PPC) in InGaN/GaN MQWs and show that the PPC effect arises from In composition fluctuations in the InGaN well layer. From the analysis of the decay kinetics, the localization depth caused by composition fluctuations has been determined. Compared with the results of complementary absorption and photoluminescence measurements, it is found that the quantum-confined Stark effect due to piezoelectric field and composition fluctuations both exist in the InGaN/GaN MQWs. These two effects are responsible for the photoluminescence Stokes' shift in the InGaN well layers. Here, we provide a unique way to distinguish the individual contribution to the Stokes' shift for the piezoelectric field and composition fluctuations.

原文英語
頁(從 - 到)338-340
頁數3
期刊Applied Physics Letters
78
發行號3
DOIs
出版狀態已發佈 - 2001 一月 15

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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