Performance Investigation of an n-Type Tin-Oxide Thin Film Transistor by Channel Plasma Processing

Z. W. Shang, J. Ma, W. D. Liu, Y. C. Fan, H. H. Hsu, Z. W. Zheng, C. H. Cheng

研究成果: 雜誌貢獻期刊論文同行評審

2 引文 斯高帕斯(Scopus)

摘要

In this paper, we investigated the performance of an n-type tin-oxide (SnOx) thin film transistor (TFT) by experiments and simulation. The fabricated SnOx TFT device by oxygen plasma treatment on the channel exhibited n-type conduction with an on/off current ratio of 4.4x104, a high field-effect mobility of 18.5 cm2/V.s and a threshold swing of 405 mV/decade, which could be attributed to the excess reacted oxygen incorporated to the channel to form the oxygen-rich n-type SnOx. Furthermore, a TCAD simulation based on the n-type SnOx TFT device was performed by fitting the experimental data to investigate the effect of the channel traps on the device performance, indicating that performance enhancements were further achieved by suppressing the density of channel traps. In addition, the n-type SnOx TFT device exhibited high stability upon illumination with visible light. The results show that the n-type SnOx TFT device by channel plasma processing has considerable potential for next-generation high-performance display application.

原文英語
文章編號9060932
頁(從 - 到)485-489
頁數5
期刊IEEE Journal of the Electron Devices Society
8
DOIs
出版狀態已發佈 - 2020

ASJC Scopus subject areas

  • 生物技術
  • 電子、光磁材料
  • 電氣與電子工程

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