Performance improvement of metal-insulator-metal capacitors using postmetallization-annealed treatment on the Al2O3/TiO 2/Al2O3 film

Chingchien Huang, Chun Hu Cheng, Kaotao Lee, Bo Heng Liou

研究成果: 雜誌貢獻文章

2 引文 斯高帕斯(Scopus)

摘要

This paper reports on metal-insulator-metal (MIM) capacitors comprised of Al2O3/TiO2/Al2O3 laminate structure with postmetallization-annealing (PMA) treatment. By applying the laminate structure to TiO2 capacitors, deposition of the Al 2O3 layer enables significant leakage current reduction while maintaining good electrical performance. For an Al2O 3/TiO2/Al2O3 film with PMA treatment, the electrical characteristics can be further improved, which is mostly due to the passivation of the dielectric interface charges. We have achieved low leakage current of 6.4 × 10-9 A/cm2 at 1 V for 18.3 fF/μm2 density Al2O3/TiO 2/Al2O3 MIM capacitors. These results meet the International Technology Roadmap for Semiconductors requirements (year 2018) of 10 fF/μm2 density and J (CV) < 7 fA (pFV).

原文英語
頁(從 - 到)H123-H126
期刊Electrochemical and Solid-State Letters
12
發行號4
DOIs
出版狀態已發佈 - 2009 二月 24
對外發佈Yes

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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