摘要
In this work, we have evaluated performance of Antiferroelectric-RAM (AFeRAM) under low temperature operation. With our nucleation limited switching (NLS)-based AFE model calibrated with the AFE HZO (Hf0.1 Zr 0.9 O2) experimental data, we have investigated the AFeRAM cell operation from 80K to 300K. Our study indicates that operating AFeRAM at low temperatures may improve the sensing margin, read/write time, and energy efficiency.
| 原文 | 英語 |
|---|---|
| 主出版物標題 | 7th IEEE Electron Devices Technology and Manufacturing Conference |
| 主出版物子標題 | Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023 |
| 發行者 | Institute of Electrical and Electronics Engineers Inc. |
| ISBN(電子) | 9798350332520 |
| DOIs | |
| 出版狀態 | 已發佈 - 2023 |
| 事件 | 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 - Seoul, 大韓民國 持續時間: 2023 3月 7 → 2023 3月 10 |
出版系列
| 名字 | 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023 |
|---|
會議
| 會議 | 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 |
|---|---|
| 國家/地區 | 大韓民國 |
| 城市 | Seoul |
| 期間 | 2023/03/07 → 2023/03/10 |
UN SDG
此研究成果有助於以下永續發展目標
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SDG 7 可負擔的潔淨能源
ASJC Scopus subject areas
- 安全、風險、可靠性和品質
- 電子、光磁材料
- 儀器
- 電氣與電子工程
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