Performance enhancements in p-type Al-doped tin-oxide thin film transistors by using fluorine plasma treatment

Po Chun Chen, Yu Chien Chiu, Guan Lin Liou, Zhi Wei Zheng, Chun Hu Cheng, Yung Hsien Wu

研究成果: 雜誌貢獻期刊論文同行評審

15 引文 斯高帕斯(Scopus)

摘要

This letter reports on a tin oxide (SnO) thin-film transistor (TFT) with p-type conduction that uses aluminum (Al) doping in the SnO active channel layer. Performance enhancements were further achieved by applying fluorine plasma treatment on the p-type Al-doped SnO channel layer. The effects of the fluorine plasma treatment were also investigated. By tuning the power of the fluorine plasma treatment on the p-type Al-doped SnO channel layer, the optimal TFT device showed a very high on/off current ratio of 2.58 × 106 and a low threshold swing of 174 mV/decade, which could be attributed to the passivation effect of the plasma fluorination on the dominant donor-like traps at the SnO/HfO2 interface, as reflected by the suppression of the hysteresis phenomenon, the low density of interface traps, and the small subthreshold swing. The results indicate that the p-type Al-doped SnO TFT device with fluorine plasma treatment has considerable potential for application in future high-performance displays.

原文英語
文章編號7801931
頁(從 - 到)210-212
頁數3
期刊IEEE Electron Device Letters
38
發行號2
DOIs
出版狀態已發佈 - 2017 二月

ASJC Scopus subject areas

  • 電子、光磁材料
  • 電氣與電子工程

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