Performance comparison of titanium-oxide resistive switching memories using GeOx and AlOx capping layers for flexible application

Kun I. Chou; Chun Hu Cheng; Albert Chin

doi:10.7567/JJAP.53.061502

Performance comparison of titanium-oxide resistive switching memories using GeO_x and AlO_x capping layers for flexible application

Kun I. Chou
, Chun Hu Cheng
, Albert Chin^*

^*此作品的通信作者

機電工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

2 引文斯高帕斯（Scopus）

摘要

To meet the requirements of flexible memory applications, we have compared two capping layers of GeO_x and AlO_x on a TiO_y resistive random access memory (RRAM) at room temperature. A Ni/GeO _x/TiO_y/TaN RRAM shows a large resistance window of >10², 85 °C retention, a highresistance-state (HRS) activation energy (E_a) of 0.52 eV, and a good DC cycling of 10³ cycles, which are significantly better than those of a Ni/ AlO _x/TiO_y/TaN RRAM, which has a high-defect-density dielectric of AlO_x.

原文	英語
文章編號	061502
期刊	Japanese Journal of Applied Physics
卷	53
發行號	6
DOIs	https://doi.org/10.7567/JJAP.53.061502
出版狀態	已發佈 - 2014 6月

ASJC Scopus subject areas

一般工程
一般物理與天文學

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10.7567/JJAP.53.061502

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abstract = "To meet the requirements of flexible memory applications, we have compared two capping layers of GeOx and AlOx on a TiOy resistive random access memory (RRAM) at room temperature. A Ni/GeO x/TiOy/TaN RRAM shows a large resistance window of >102, 85 °C retention, a highresistance-state (HRS) activation energy (Ea) of 0.52 eV, and a good DC cycling of 103 cycles, which are significantly better than those of a Ni/ AlO x/TiOy/TaN RRAM, which has a high-defect-density dielectric of AlOx.",

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AU - Chou, Kun I.

AU - Cheng, Chun Hu

AU - Chin, Albert

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Y1 - 2014/6

N2 - To meet the requirements of flexible memory applications, we have compared two capping layers of GeOx and AlOx on a TiOy resistive random access memory (RRAM) at room temperature. A Ni/GeO x/TiOy/TaN RRAM shows a large resistance window of >102, 85 °C retention, a highresistance-state (HRS) activation energy (Ea) of 0.52 eV, and a good DC cycling of 103 cycles, which are significantly better than those of a Ni/ AlO x/TiOy/TaN RRAM, which has a high-defect-density dielectric of AlOx.

AB - To meet the requirements of flexible memory applications, we have compared two capping layers of GeOx and AlOx on a TiOy resistive random access memory (RRAM) at room temperature. A Ni/GeO x/TiOy/TaN RRAM shows a large resistance window of >102, 85 °C retention, a highresistance-state (HRS) activation energy (Ea) of 0.52 eV, and a good DC cycling of 103 cycles, which are significantly better than those of a Ni/ AlO x/TiOy/TaN RRAM, which has a high-defect-density dielectric of AlOx.

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

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Performance comparison of titanium-oxide resistive switching memories using GeOx and AlOx capping layers for flexible application

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ASJC Scopus subject areas

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Performance comparison of titanium-oxide resistive switching memories using GeO_x and AlO_x capping layers for flexible application