Performance comparison of titanium-oxide resistive switching memories using GeOx and AlOx capping layers for flexible application

Kun I. Chou, Chun-Hu Cheng, Albert Chin

研究成果: 雜誌貢獻文章

2 引文 (Scopus)

摘要

To meet the requirements of flexible memory applications, we have compared two capping layers of GeOx and AlOx on a TiOy resistive random access memory (RRAM) at room temperature. A Ni/GeO x/TiOy/TaN RRAM shows a large resistance window of >102, 85 °C retention, a highresistance-state (HRS) activation energy (Ea) of 0.52 eV, and a good DC cycling of 103 cycles, which are significantly better than those of a Ni/ AlO x/TiOy/TaN RRAM, which has a high-defect-density dielectric of AlOx.

原文英語
文章編號061502
期刊Japanese Journal of Applied Physics
53
發行號6
DOIs
出版狀態已發佈 - 2014 一月 1

指紋

Titanium oxides
random access memory
titanium oxides
Data storage equipment
cycles
Defect density
direct current
activation energy
requirements
Activation energy
defects
room temperature
Temperature

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

引用此文

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AB - To meet the requirements of flexible memory applications, we have compared two capping layers of GeOx and AlOx on a TiOy resistive random access memory (RRAM) at room temperature. A Ni/GeO x/TiOy/TaN RRAM shows a large resistance window of >102, 85 °C retention, a highresistance-state (HRS) activation energy (Ea) of 0.52 eV, and a good DC cycling of 103 cycles, which are significantly better than those of a Ni/ AlO x/TiOy/TaN RRAM, which has a high-defect-density dielectric of AlOx.

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