摘要
Ni films, replacing photoresists, serve as masks in the selective deposition of optical thin films by electron-beam gun evaporation at a substrate temperature of 300°C. Photolithography is adopted herein to define the growth of Ni films by electroforming. Mosaic patterns with a width of 20 μm are employed as red color filters, which are longwave pass. These red filters are formed from alternate SiO2 and TiO2 layers and have a mean transmittance of (90%. The experimental results show that the combined use of photolithography, electroforming, and electron-beam gun evaporation can deposit miniaturized multilayer dielectric coatings with high light transmittance in a hot process.
原文 | 英語 |
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文章編號 | 033009 |
期刊 | Journal of Micro/Nanolithography, MEMS, and MOEMS |
卷 | 8 |
發行號 | 3 |
DOIs | |
出版狀態 | 已發佈 - 2009 |
ASJC Scopus subject areas
- 電子、光磁材料
- 原子與分子物理與光學
- 凝聚態物理學
- 機械工業
- 電氣與電子工程