Paramagnetic and ferromagnetic resonance studies on dilute magnetic semiconductors based on GaN

T. Kammermeier*, S. Dhar, V. Ney, E. Manuel, A. Ney, K. H. Ploog, Fang-Yuh Lo, A. Melnikov, A. D. Wieck

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

10 引文 斯高帕斯(Scopus)

摘要

Magnetic resonance studies were preformed on the dilute magnetic semiconductor Gd : GaN. In samples grown by molecular beam epitaxy resonances were observed at temperatures below 50 K. The temperature dependence of the resonance field and the line width suggest a ferromagnetic origin. No similar signals were found in Gd implanted samples even for a Gd concentration ten times higher. At temperatures close to 5 K additional signals were observed near g = 2 in these samples. They are superimposed by a strong substrate signal which is observable in all samples and is attributed to nitrogen donors on sites of different symmetry in the SiC substrate crystal. Different possible explanations of our findings are discussed with special regard to a model suggesting magnetically polarized spheres of influence. By means of magnetic resonance we can not corroborate ferromagnetism at room temperature in Gd:GaN as suggested by SQUID data.

原文英語
頁(從 - 到)1872-1875
頁數4
期刊Physica Status Solidi (A) Applications and Materials Science
205
發行號8
DOIs
出版狀態已發佈 - 2008 八月 1

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 表面和介面
  • 表面、塗料和薄膜
  • 電氣與電子工程
  • 材料化學

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