@inproceedings{48cc6dcc55b9448b903ddde48fb2252f,
title = "Paraelectric-Ferroelectric Transition in Hafnium-Oxide-Based Ferroelectric Memory",
abstract = "In this work, we report the paraelectric-ferroelectric transition of the ferroelectric HfZrO with buffered HfNO. Our experimental and simulated results reveal that the buffered HfNO plays a key role in paraelectric-ferroelectric switching and ferroelectric recovery during cycled switching. The transient current pulse measurement was employed to verify the switching mechanism.",
keywords = "Ferroelectric, HfZrO, Paraelectric",
author = "Fan, {Chia Chi} and Chiu, {Yu Chien} and Chien Liu and Lai, {Wen Wei} and Tu, {Chun Yuan} and Lin, {Ming Huei} and Chang, {Tun Jen} and Chang, {Chun Yen} and Liou, {Guan Lin} and Hsu, {Hsiao Hsuan} and Tang, {Cheng Yu} and Cheng, {Chun Hu}",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 ; Conference date: 13-03-2018 Through 16-03-2018",
year = "2018",
month = jul,
day = "26",
doi = "10.1109/EDTM.2018.8421478",
language = "English",
isbn = "9781538637111",
series = "2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "280--282",
booktitle = "2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings",
}