Paraelectric-Ferroelectric Transition in Hafnium-Oxide-Based Ferroelectric Memory

Chia Chi Fan, Yu Chien Chiu, Chien Liu, Wen Wei Lai, Chun Yuan Tu, Ming Huei Lin, Tun Jen Chang, Chun Yen Chang, Guan Lin Liou, Hsiao Hsuan Hsu, Cheng Yu Tang, Chun Hu Cheng

研究成果: 書貢獻/報告類型會議貢獻

1 引文 斯高帕斯(Scopus)

摘要

In this work, we report the paraelectric-ferroelectric transition of the ferroelectric HfZrO with buffered HfNO. Our experimental and simulated results reveal that the buffered HfNO plays a key role in paraelectric-ferroelectric switching and ferroelectric recovery during cycled switching. The transient current pulse measurement was employed to verify the switching mechanism.

原文英語
主出版物標題2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
頁面280-282
頁數3
ISBN(列印)9781538637111
DOIs
出版狀態已發佈 - 2018 七月 26
事件2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Kobe, 日本
持續時間: 2018 三月 132018 三月 16

出版系列

名字2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

其他

其他2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
國家日本
城市Kobe
期間18/3/1318/3/16

    指紋

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials

引用此

Fan, C. C., Chiu, Y. C., Liu, C., Lai, W. W., Tu, C. Y., Lin, M. H., Chang, T. J., Chang, C. Y., Liou, G. L., Hsu, H. H., Tang, C. Y., & Cheng, C. H. (2018). Paraelectric-Ferroelectric Transition in Hafnium-Oxide-Based Ferroelectric Memory. 於 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings (頁 280-282). [8421478] (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2018.8421478