Package-strain-enhanced device and circuit performance

S. Maikap, M. H. Liao, F. Yuan, M. H. Lee, C. F. Huang, S. T. Chang, C. W. Liu

    研究成果: 雜誌貢獻會議論文同行評審

    21 引文 斯高帕斯(Scopus)


    The hole mobility enhancement can be as high as ∼18% for SiO 2 and ∼20% for high-K HfO2 gate stack dielectrics with the uniaxial compressive strain (0.2%) parallel to the channel. The highest drain current of ∼22% at saturation and ∼30% at linear region is observed for the bulk Si PMOS with high-K gate stacks. The drain current and hole mobility of bulk Si PMOS are degraded under the small biaxial tensile strain, while substrate-strained Si device shows opposite. The non-optimized ring oscillator has the speed enhancement of ∼7% under the uniaxial tensile strain parallel to NMOS channel. Proper package strain also gives the drive-current as well as mobility enhancement at 100°C.

    頁(從 - 到)233-238
    期刊Technical Digest - International Electron Devices Meeting, IEDM
    出版狀態已發佈 - 2004 十二月 1
    事件IEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, 美国
    持續時間: 2004 十二月 132004 十二月 15

    ASJC Scopus subject areas

    • 電子、光磁材料
    • 凝聚態物理學
    • 電氣與電子工程
    • 材料化學


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