The hole mobility enhancement can be as high as ∼18% for SiO 2 and ∼20% for high-K HfO2 gate stack dielectrics with the uniaxial compressive strain (0.2%) parallel to the channel. The highest drain current of ∼22% at saturation and ∼30% at linear region is observed for the bulk Si PMOS with high-K gate stacks. The drain current and hole mobility of bulk Si PMOS are degraded under the small biaxial tensile strain, while substrate-strained Si device shows opposite. The non-optimized ring oscillator has the speed enhancement of ∼7% under the uniaxial tensile strain parallel to NMOS channel. Proper package strain also gives the drive-current as well as mobility enhancement at 100°C.
|頁（從 - 到）||233-238|
|期刊||Technical Digest - International Electron Devices Meeting, IEDM|
|出版狀態||已發佈 - 2004 十二月 1|
|事件||IEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, 美国|
持續時間: 2004 十二月 13 → 2004 十二月 15
ASJC Scopus subject areas