P-Type tunneling transistors with polycrystalline silicon by sequential lateral solidification growth technique

Engineering & Materials Science

• Polysilicon 100%
• Solidification 84%
• Transistors 73%
• Three dimensional integrated circuits 40%
• Microwave circuits 38%
• Threshold voltage 31%
• Leakage currents 31%
• Voltage control 26%
• Display devices 22%
• Temperature 11%

Physics & Astronomy

• solidification 79%
• transistors 69%
• silicon 46%
• microwave circuits 18%
• low currents 15%
• avalanches 13%
• integrated circuits 13%
• threshold voltage 13%
• leakage 11%
• temperature dependence 9%