P-Type tunneling transistors with polycrystalline silicon by sequential lateral solidification growth technique

Min Hung Lee, Ssu Chieh Weng

研究成果: 雜誌貢獻文章

17 引文 斯高帕斯(Scopus)

摘要

p-Type tunneling transistors with polycrystalline silicon were fabricated, and their electrical characteristics were studied. The temperature dependence of the tunneling current proves that the current of our device is indeed due to the band-to-band tunneling effect, rather than to the avalanche effect. The reliability of the polycrystalline silicon (poly-Si) tunneling transistors with a grain direction effect due to the active layer formed by the sequential lateral solidification (SLS) growth technique was examined. The device with a channel parallel to the grains has a high band-to-band tunneling current, low leakage current, and threshold voltage stability with constant current stress. Promising poly-Si tunneling transistors with a gate-controlled current and a low off-current have attracted attention for some applications such as in display backplanes, threedimensional integrated circuits (3D-ICs), and microwave circuits in the future.

原文英語
文章編號02BJ13
期刊Japanese Journal of Applied Physics
51
發行號2 PART 2
DOIs
出版狀態已發佈 - 2012 二月 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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