p-Type tunneling field-effect transistors on (100)- and (110)-oriented Si substrates

Min Hung Lee*, Bin Fong Hsieh, Tong Han Wu, Shu Tong Chang

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

摘要

P-Type tunneling field-effect transistors (TFETs) on (100)- and (110)-oriented Si substrates were fabricated, and their electrical characteristics were studied. High-k dielectric and metal gate were integrated as a gate stack, and the gate-last process was performed to obtain a high-quality dielectric layer and prevent crystallization. The orientation effect of p-type TFETs on (100) and (110) Si wafers is a high ION in the case of the (110) orientation as compared with that of the (100) p-type TFET, which is a high band-to-band tunneling current. The junction profile and effective mass were discussed to determine possible reasons for the orientation effect of p-type TFETs on (100) and (110) Si wafers.

原文英語
期刊Japanese Journal of Applied Physics
50
發行號10 PART 2
DOIs
出版狀態已發佈 - 2011 十月

ASJC Scopus subject areas

  • 工程 (全部)
  • 物理與天文學 (全部)

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