P-type tunneling FET on Si (110) substrate with anisotropic effect

M. H. Lee, C. Y. Kao, C. L. Yang, C. H. Lee

研究成果: 書貢獻/報告類型會議論文篇章

1 引文 斯高帕斯(Scopus)


The promising potential of tunneling FETs (TFETs) for steep switch behavior with gate controlled band-to-band tunneling (BTBT) mechanism has attracted much attention for supply voltage (VDD) scaling and power consumption next generation CMOS [1, 2]. However, the challenge for TFETs is lower drive currents as compare with MOSFET due to a high conductance resistance while reverse bias. Tunneling FETs (TFETs) operates with band-to-band tunneling current that change with the channel potential more abruptly than thermionic emission current. In order to obtain high ION without sacrificing IOFF, and the high-k dielectric and metal gate are integrated as gate stack. To obtain high quality and avoid crystallizing of high-K layer, the gate last process was performed in this work. For N-TFET, much works have been reported on the SS improvement [4, 5]. For P-TFET, Bhuwalka et al. reported the ambipolar working of vertical TFET with negative gate bias, which obtain SS < 60mV/dec [6, 7]. In this work, we will demonstrate HK/MG (high-K/metal gate) P-TFET with the gate last process, and discuss the anisotropic effect on (110) substrate.

主出版物標題69th Device Research Conference, DRC 2011 - Conference Digest
出版狀態已發佈 - 2011
事件69th Device Research Conference, DRC 2011 - Santa Barbara, CA, 美国
持續時間: 2011 6月 202011 6月 22


名字Device Research Conference - Conference Digest, DRC


其他69th Device Research Conference, DRC 2011
城市Santa Barbara, CA

ASJC Scopus subject areas

  • 電氣與電子工程


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