P-type tin-oxide thin film transistors for blue-light detection application

Po Chun Chen; Yu Chien Chiu; Zhi Wei Zheng; Chun Hu Cheng; Yung Hsien Wu

doi:10.1002/pssr.201600287

P-type tin-oxide thin film transistors for blue-light detection application

Po Chun Chen
, Yu Chien Chiu
, Zhi Wei Zheng^*
, Chun Hu Cheng
, Yung Hsien Wu

^*此作品的通信作者

機電工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

9 引文斯高帕斯（Scopus）

摘要

We reported the characteristics of p-type tin-oxide (SnO) thin film transistors (TFTs) upon illumination with visible light. Our p-type TFT device using the SnO film as the active channel layer exhibits high sensitivity toward the blue-light with a high light/dark read current ratio (I_light/I_dark) of 8.2 × 10³ at a very low driven voltage of <3 V. Since sensing of blue-light radiation is very critical to our eyes, the proposed p-type SnO TFTs with high sensitivity toward the blue-light show great potential for future blue-light detection applications. (Figure presented.).

原文	英語
頁（從 - 到）	919-923
頁數	5
期刊	Physica Status Solidi - Rapid Research Letters
卷	10
發行號	12
DOIs	https://doi.org/10.1002/pssr.201600287
出版狀態	已發佈 - 2016 12月 1

ASJC Scopus subject areas

一般材料科學
凝聚態物理學

存取文件

10.1002/pssr.201600287

其它文件與鏈接

引用此

@article{9a6ad90cbf7c4004b0ed0d81531080b4,

title = "P-type tin-oxide thin film transistors for blue-light detection application",

abstract = "We reported the characteristics of p-type tin-oxide (SnO) thin film transistors (TFTs) upon illumination with visible light. Our p-type TFT device using the SnO film as the active channel layer exhibits high sensitivity toward the blue-light with a high light/dark read current ratio (Ilight/Idark) of 8.2 × 103 at a very low driven voltage of <3 V. Since sensing of blue-light radiation is very critical to our eyes, the proposed p-type SnO TFTs with high sensitivity toward the blue-light show great potential for future blue-light detection applications. (Figure presented.).",

keywords = "SnO, blue light, detection, p-type, thin film transistors",

author = "Chen, \{Po Chun\} and Chiu, \{Yu Chien\} and Zheng, \{Zhi Wei\} and Cheng, \{Chun Hu\} and Wu, \{Yung Hsien\}",

note = "Publisher Copyright: {\textcopyright} 2016 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim",

year = "2016",

month = dec,

day = "1",

doi = "10.1002/pssr.201600287",

language = "English",

volume = "10",

pages = "919--923",

journal = "Physica Status Solidi - Rapid Research Letters",

issn = "1862-6254",

publisher = "Wiley-VCH Verlag",

number = "12",

}

TY - JOUR

T1 - P-type tin-oxide thin film transistors for blue-light detection application

AU - Chen, Po Chun

AU - Chiu, Yu Chien

AU - Zheng, Zhi Wei

AU - Cheng, Chun Hu

AU - Wu, Yung Hsien

PY - 2016/12/1

Y1 - 2016/12/1

N2 - We reported the characteristics of p-type tin-oxide (SnO) thin film transistors (TFTs) upon illumination with visible light. Our p-type TFT device using the SnO film as the active channel layer exhibits high sensitivity toward the blue-light with a high light/dark read current ratio (Ilight/Idark) of 8.2 × 103 at a very low driven voltage of <3 V. Since sensing of blue-light radiation is very critical to our eyes, the proposed p-type SnO TFTs with high sensitivity toward the blue-light show great potential for future blue-light detection applications. (Figure presented.).

AB - We reported the characteristics of p-type tin-oxide (SnO) thin film transistors (TFTs) upon illumination with visible light. Our p-type TFT device using the SnO film as the active channel layer exhibits high sensitivity toward the blue-light with a high light/dark read current ratio (Ilight/Idark) of 8.2 × 103 at a very low driven voltage of <3 V. Since sensing of blue-light radiation is very critical to our eyes, the proposed p-type SnO TFTs with high sensitivity toward the blue-light show great potential for future blue-light detection applications. (Figure presented.).

KW - SnO

KW - blue light

KW - detection

KW - p-type

KW - thin film transistors

UR - https://www.scopus.com/pages/publications/85000415120

UR - https://www.scopus.com/pages/publications/85000415120#tab=citedBy

U2 - 10.1002/pssr.201600287

DO - 10.1002/pssr.201600287

M3 - Article

AN - SCOPUS:85000415120

SN - 1862-6254

VL - 10

SP - 919

EP - 923

JO - Physica Status Solidi - Rapid Research Letters

JF - Physica Status Solidi - Rapid Research Letters

IS - 12

ER -

P-type tin-oxide thin film transistors for blue-light detection application

摘要

ASJC Scopus subject areas

存取文件

其它文件與鏈接

指紋

引用此