P-type tin-oxide thin film transistors for blue-light detection application

Po Chun Chen; Yu Chien Chiu; Zhi Wei Zheng; Chun Hu Cheng; Yung Hsien Wu

doi:10.1002/pssr.201600287

P-type tin-oxide thin film transistors for blue-light detection application

Po Chun Chen, Yu Chien Chiu, Zhi Wei Zheng^*, Chun Hu Cheng, Yung Hsien Wu

^*此作品的通信作者

機電工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

8 引文斯高帕斯（Scopus）

摘要

We reported the characteristics of p-type tin-oxide (SnO) thin film transistors (TFTs) upon illumination with visible light. Our p-type TFT device using the SnO film as the active channel layer exhibits high sensitivity toward the blue-light with a high light/dark read current ratio (I_light/I_dark) of 8.2 × 10³ at a very low driven voltage of <3 V. Since sensing of blue-light radiation is very critical to our eyes, the proposed p-type SnO TFTs with high sensitivity toward the blue-light show great potential for future blue-light detection applications. (Figure presented.).

原文	英語
頁（從 - 到）	919-923
頁數	5
期刊	Physica Status Solidi - Rapid Research Letters
卷	10
發行號	12
DOIs	https://doi.org/10.1002/pssr.201600287
出版狀態	已發佈 - 2016 12月 1

ASJC Scopus subject areas

一般材料科學
凝聚態物理學

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10.1002/pssr.201600287

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引用此

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title = "P-type tin-oxide thin film transistors for blue-light detection application",

abstract = "We reported the characteristics of p-type tin-oxide (SnO) thin film transistors (TFTs) upon illumination with visible light. Our p-type TFT device using the SnO film as the active channel layer exhibits high sensitivity toward the blue-light with a high light/dark read current ratio (Ilight/Idark) of 8.2 × 103 at a very low driven voltage of <3 V. Since sensing of blue-light radiation is very critical to our eyes, the proposed p-type SnO TFTs with high sensitivity toward the blue-light show great potential for future blue-light detection applications. (Figure presented.).",

keywords = "SnO, blue light, detection, p-type, thin film transistors",

author = "Chen, {Po Chun} and Chiu, {Yu Chien} and Zheng, {Zhi Wei} and Cheng, {Chun Hu} and Wu, {Yung Hsien}",

note = "Publisher Copyright: {\textcopyright} 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

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AU - Chen, Po Chun

AU - Chiu, Yu Chien

AU - Zheng, Zhi Wei

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AU - Wu, Yung Hsien

PY - 2016/12/1

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N2 - We reported the characteristics of p-type tin-oxide (SnO) thin film transistors (TFTs) upon illumination with visible light. Our p-type TFT device using the SnO film as the active channel layer exhibits high sensitivity toward the blue-light with a high light/dark read current ratio (Ilight/Idark) of 8.2 × 103 at a very low driven voltage of <3 V. Since sensing of blue-light radiation is very critical to our eyes, the proposed p-type SnO TFTs with high sensitivity toward the blue-light show great potential for future blue-light detection applications. (Figure presented.).

AB - We reported the characteristics of p-type tin-oxide (SnO) thin film transistors (TFTs) upon illumination with visible light. Our p-type TFT device using the SnO film as the active channel layer exhibits high sensitivity toward the blue-light with a high light/dark read current ratio (Ilight/Idark) of 8.2 × 103 at a very low driven voltage of <3 V. Since sensing of blue-light radiation is very critical to our eyes, the proposed p-type SnO TFTs with high sensitivity toward the blue-light show great potential for future blue-light detection applications. (Figure presented.).

KW - SnO

KW - blue light

KW - detection

KW - p-type

KW - thin film transistors

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P-type tin-oxide thin film transistors for blue-light detection application

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ASJC Scopus subject areas

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