P-103: Redistributed deep states created by mechanical bending to improve the electrical reliability of a-Si:H TFTs on flexible substrates

M. H. Lee; S. H. Lu; S. T. Chang; M. Tang; J. J. Huang; K. Y. Ho; Y. S. Huang; C. C. Lee

doi:10.1889/1.3500146

P-103: Redistributed deep states created by mechanical bending to improve the electrical reliability of a-Si:H TFTs on flexible substrates

M. H. Lee^*
, S. H. Lu
, S. T. Chang
, M. Tang
, J. J. Huang
, K. Y. Ho
, Y. S. Huang
, C. C. Lee

^*此作品的通信作者

光電工程研究所暨學士學位學程

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

摘要

The disordered bonds of a-Si:H may generate a redistribution of trapped states with strain bending. The redistributed deep states may saturate with multiple mechanical bending cycles, and it would improve the reliability with drain current stress of a-Si:H TFTs on flexible substrates. It is possible to produce low cost and highly uniform AMOLED systems for flexible display applications using a-Si:H TFTs array backplanes.

原文	英語
頁（從 - 到）	1636-1639
頁數	4
期刊	Digest of Technical Papers - SID International Symposium
卷	41 1
DOIs	https://doi.org/10.1889/1.3500146
出版狀態	已發佈 - 2010 5月

ASJC Scopus subject areas

一般工程

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10.1889/1.3500146

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abstract = "The disordered bonds of a-Si:H may generate a redistribution of trapped states with strain bending. The redistributed deep states may saturate with multiple mechanical bending cycles, and it would improve the reliability with drain current stress of a-Si:H TFTs on flexible substrates. It is possible to produce low cost and highly uniform AMOLED systems for flexible display applications using a-Si:H TFTs array backplanes.",

author = "Lee, \{M. H.\} and Lu, \{S. H.\} and Chang, \{S. T.\} and M. Tang and Huang, \{J. J.\} and Ho, \{K. Y.\} and Huang, \{Y. S.\} and Lee, \{C. C.\}",

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T2 - Redistributed deep states created by mechanical bending to improve the electrical reliability of a-Si:H TFTs on flexible substrates

AU - Lee, M. H.

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AU - Tang, M.

AU - Huang, J. J.

AU - Ho, K. Y.

AU - Huang, Y. S.

AU - Lee, C. C.

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P-103: Redistributed deep states created by mechanical bending to improve the electrical reliability of a-Si:H TFTs on flexible substrates

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