P-103: Redistributed deep states created by mechanical bending to improve the electrical reliability of a-Si:H TFTs on flexible substrates

M. H. Lee*, S. H. Lu, S. T. Chang, M. Tang, J. J. Huang, K. Y. Ho, Y. S. Huang, C. C. Lee

*此作品的通信作者

研究成果: 書貢獻/報告類型會議論文篇章

摘要

The disordered bonds of a-Si:H may generate a redistribution of trapped states with strain bending. The redistributed deep states may saturate with multiple mechanical bending cycles, and it would improve the reliability with drain current stress of a-Si:H TFTs on flexible substrates. It is possible to produce low cost and highly uniform AMOLED systems for flexible display applications using a-Si:H TFTs array backplanes.

原文英語
主出版物標題48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
頁面1636-1639
頁數4
出版狀態已發佈 - 2010
事件48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 - Seattle, WA, 美国
持續時間: 2010 五月 232010 五月 28

出版系列

名字48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
3

其他

其他48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
國家/地區美国
城市Seattle, WA
期間2010/05/232010/05/28

ASJC Scopus subject areas

  • 硬體和架構
  • 資訊系統

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