摘要
In this study, we demonstrated experimentally and theoretically that oxygen vacancies are responsible for the charge transport in HfO2. Basing on the model of phonon-assisted tunneling between traps, and assuming that the electron traps are oxygen vacancies, good quantitative agreement between the experimental and theoretical data of current-voltage characteristics was achieved. The thermal trap energy of 1.25eV in HfO2 was determined based on the charge transport experiments.
原文 | 英語 |
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文章編號 | 222901 |
期刊 | Applied Physics Letters |
卷 | 105 |
發行號 | 22 |
DOIs | |
出版狀態 | 已發佈 - 2014 12月 1 |
ASJC Scopus subject areas
- 物理與天文學(雜項)