Origin of traps and charge transport mechanism in hafnia

D. R. Islamov, V. A. Gritsenko, C. H. Cheng, A. Chin

研究成果: 雜誌貢獻期刊論文同行評審

30 引文 斯高帕斯(Scopus)

摘要

In this study, we demonstrated experimentally and theoretically that oxygen vacancies are responsible for the charge transport in HfO2. Basing on the model of phonon-assisted tunneling between traps, and assuming that the electron traps are oxygen vacancies, good quantitative agreement between the experimental and theoretical data of current-voltage characteristics was achieved. The thermal trap energy of 1.25eV in HfO2 was determined based on the charge transport experiments.

原文英語
文章編號222901
期刊Applied Physics Letters
105
發行號22
DOIs
出版狀態已發佈 - 2014 十二月 1

ASJC Scopus subject areas

  • 物理與天文學(雜項)

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