Optoelectronic properties of ZnSe/ZnMgSSe multiple quantum wells

C. W. Chang, H. C. Yang, C. H. Chen, H. J. Chang, Y. F. Chen

研究成果: 雜誌貢獻文章

11 引文 斯高帕斯(Scopus)

摘要

Optoelectronic properties of undoped ZnSe/ZnMgSSe multiple quantum wells (MQWs) grown by molecular beam epitaxy on (001) GaAs substrates have been investigated by photoluminescence, photoconductivity, and persistent photoconductivity (PPC) measurements. The features related to the band-to-band excitonic and impurity-related transitions of ZnSe/ZnMgSSe MQWs are observed and discussed. In addition, the parameters that describe the temperature dependence of the interband transition energy and broadening function of the excitonic feature are evaluated. PPC has been observed in undoped ZnSe/ZnMgSSe MQWs. The decay kinetics of the PPC effect can be described by a stretched-exponential function, Ippc(t)=Ippc(0)exp[-(t/τ)β], (0<β<1). Through the study of the PPC effect under various conditions, such as different temperature, different photon energy of photoexcitation, and different ZnSe well width, we identify that the carrier excitation from the defect level in ZnMgSSe barrier layer into the ZnSe well layer is the origin of the PPC effect in ZnSe/ZnMgSSe MQWs.

原文英語
頁(從 - 到)3725-3729
頁數5
期刊Journal of Applied Physics
89
發行號7
DOIs
出版狀態已發佈 - 2001 四月 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Chang, C. W., Yang, H. C., Chen, C. H., Chang, H. J., & Chen, Y. F. (2001). Optoelectronic properties of ZnSe/ZnMgSSe multiple quantum wells. Journal of Applied Physics, 89(7), 3725-3729. https://doi.org/10.1063/1.1350416