Optimization on SCR device with low capacitance for on-chip ESD protection in UWB RF circuits

Chun Yu Lin*, Ming Dou Ker

*此作品的通信作者

研究成果: 書貢獻/報告類型會議論文篇章

摘要

Low capacitance (low-C) design on ESD protection device is a solution to mitigate the radio-frequency (RF) performance degradation caused by electrostatic discharge (ESD) protection device. Silicon-controlled rectifier (SCR) device has been used as an effective on-chip ESD protection device in RF ICs due to the smaller layout area and small parasitic capacitance under the same ESD robustness. In this paper, the modified lateral SCR (MLSCR) realized in waffle layout structure is studied to minimize the parasitic capacitance and the variation of the parasitic capacitance within ultra-wide band (UWB) frequencies. With the minimized parasitic capacitance, the degradation on RF circuit performance due to ESD protection devices can be reduced. The waffle MLSCR with low parasitic capacitance is suitable for on-chip ESD protection in UWB RF ICs. Besides, the turn-on speed of MLSCR with waffle layout structure is verified to be better than that with conventional stripe structure.

原文英語
主出版物標題2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
DOIs
出版狀態已發佈 - 2008
對外發佈
事件2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA - Singapore, 新加坡
持續時間: 2008 7月 72008 7月 11

出版系列

名字Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

其他

其他2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
國家/地區新加坡
城市Singapore
期間2008/07/072008/07/11

ASJC Scopus subject areas

  • 一般工程

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