摘要
The diode stackup has been used as on-chip electrostatic discharge (ESD) protection for some applications in which the input/output signal swing is higher than VDD or lower than VSS. A novel ESD protection structure of diode stackup is proposed for effective on-chip ESD protection. Experimental results in 65-nm CMOS process show that the optimization on layout style can improve the ESD robustness, decrease the turn-on resistance, and lessen the parasitic capacitance of the diode stackup.
| 原文 | 英語 |
|---|---|
| 文章編號 | 6763105 |
| 頁(從 - 到) | 775-777 |
| 頁數 | 3 |
| 期刊 | IEEE Transactions on Device and Materials Reliability |
| 卷 | 14 |
| 發行號 | 2 |
| DOIs | |
| 出版狀態 | 已發佈 - 2014 6月 |
ASJC Scopus subject areas
- 電子、光磁材料
- 安全、風險、可靠性和品質
- 電氣與電子工程
指紋
深入研究「Optimization on layout style of diode stackup for on-chip ESD protection」主題。共同形成了獨特的指紋。引用此
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