The diode stackup has been used as on-chip electrostatic discharge (ESD) protection for some applications in which the input/output signal swing is higher than VDD or lower than VSS. A novel ESD protection structure of diode stackup is proposed for effective on-chip ESD protection. Experimental results in 65-nm CMOS process show that the optimization on layout style can improve the ESD robustness, decrease the turn-on resistance, and lessen the parasitic capacitance of the diode stackup.
|頁（從 - 到）||775-777|
|期刊||IEEE Transactions on Device and Materials Reliability|
|出版狀態||已發佈 - 2014 六月|
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