Optimization of BiFeO3MFIS capacitors doped niobium by using Taguchi method

K. C. Lin, C. H. Ko, M. J. Twu, P. C. Juan, H. Sekiguchi, C. H. Chou

研究成果: 書貢獻/報告類型會議論文篇章

摘要

In this study,MFIS (Metal/Ferroelectric/Insulator/Semiconductor) capacitors whose structure is Al/BFO+Nb/HfO2/p-Si are investigatedby using Taguchi Method. The effects of leakage current, memory window, and signal-to-noise ratio (S/N ratio) are discussed by different process conditions. As a result, the leakage current and memory window indicate the better performance on th same process condition. The better conditions of this MFIS capacitoroccur in rapid thermal annealing (RTA) at 700 ° C, 5W direct current (DC)power of Nb sputtering and 15 of argon-to-oxygen ratio for laekage current and memory window.Oxygen vacancies were reduced bydoping niobium (Nb) that Nb ions replace ferrum (Fe) ions with RTA at 700°C. The more Nb dopesthe more Nb ions replace Fe ions. Butthe excessive Nb induces to increase the leakage current and reduce the memory widow.

原文英語
主出版物標題Quantum, Nano, Micro Technologies and Applied Researches
頁面141-145
頁數5
DOIs
出版狀態已發佈 - 2014
對外發佈Yes
事件2013 2nd International Symposium on Quantum, Nano and Micro Technologies, ISQNM 2013 - , 新加坡
持續時間: 2013 十二月 12013 十二月 2

出版系列

名字Applied Mechanics and Materials
481
ISSN(列印)1660-9336
ISSN(電子)1662-7482

其他

其他2013 2nd International Symposium on Quantum, Nano and Micro Technologies, ISQNM 2013
國家新加坡
期間2013/12/012013/12/02

ASJC Scopus subject areas

  • Engineering(all)

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