Optimal Ge profile design for base transit time of Si/SiGe HBTs

S. T. Chang*, Y. H. Liu, M. H. Lee, S. C. Lu, M. J. Tsai


研究成果: 雜誌貢獻期刊論文同行評審

3 引文 斯高帕斯(Scopus)


The steep Ge profile in the SiGe base yields the tradeoff between a large accelerating field in the base region, and a low saturation velocity in the base region near the collector. The Ge mole fraction, electric field and doping concentration dependence of minority electron mobility is obtained from the Monte Carlo simulation. An analytical analysis of the base transit time is given and compared with energy balance simulation with consistency. The high Ge content at the base-collector junction produces large strain in the base and requires the low thermal budget process to avoid the dislocation generation, but does not always reduce the base transit time due to the low saturation velocity in the high Ge content region. The minimum Ge content needed at the base-collector junction of graded SiGe HBTs can be predicted by our analysis.

頁(從 - 到)289-294
期刊Materials Science in Semiconductor Processing
發行號1-3 SPEC. ISS.
出版狀態已發佈 - 2005 2月

ASJC Scopus subject areas

  • 一般材料科學
  • 凝聚態物理學
  • 材料力學
  • 機械工業


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