Optical quenching of the photoconductivity in n-type GaN

T. Y. Lin*, H. C. Yang, Y. F. Chen

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

36 引文 斯高帕斯(Scopus)

摘要

Results of optical quenching of photoconductivity measurements in undoped n-type and Se-doped GaN epitaxial thin films are presented. The spectral distribution of quenching phenomena shows a broadband centered around 1.26 eV. Transient changes in photoconductivity on application or removal of the quenching radiation are shown to exhibit a metastable behavior. The results reveal that the origin of the optical quenching phenomena is closely related to the defects corresponding to the persistent photoconductivity effects and the yellow luminescence band observed in most n-type GaN. In addition, this result indicates that these defects can have multiple charge states. It is found that the quenching ratio increases with increasing Se-doping concentration. We point out that the origin of the defects responsible for the optical quenching can be attributed to nitrogen antisite and/or Ga vacancy.

原文英語
頁(從 - 到)3404-3408
頁數5
期刊Journal of Applied Physics
87
發行號7
DOIs
出版狀態已發佈 - 2000 四月

ASJC Scopus subject areas

  • 物理與天文學 (全部)

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