Optical properties of InGaNAs/GaAs quantum well structures with GaNAs strain relief buffer layers

Cheng Yuan Chen, Jia Ren Lee, Chien Rong Lu*, Hsiang Lin Liu, Li Wen Sun, Hao Hsiung Lin

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

1 引文 斯高帕斯(Scopus)

摘要

The modulated optical responses of InGaNAs/GaAs quantum well structures were characterized by photoreflectance spectroscopy. The quantum well excitonic interband transitions were observed in the spectral range above hν=Eg (InGaNAs). When the InGaNAs well is sandwiched in between GaNAs strain relief buffer layers, the quantum confinement potential becomes one step wider and increases the number of quantum states in the system. The quantum well subband energies and wave functions were calculated numerically to compare with the major optical features. The modulated optical responses are enhanced, especially for those quantum states with wave function extending into GaNAs and GaAs barriers where interface space charges induce strong internal field and enhance the electro-modulation efficiency.

原文英語
頁(從 - 到)493-496
頁數4
期刊Journal of Physics and Chemistry of Solids
69
發行號2-3
DOIs
出版狀態已發佈 - 2008 二月

ASJC Scopus subject areas

  • 化學 (全部)
  • 材料科學(全部)
  • 凝聚態物理學

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