Optical properties of GaNAs/GaAs triple quantum well structures

Yo Yu Chen; Jia Ren Lee; Meng Luan Weng; Chien Rong Lu; Bing Ruey Wu; Wen Jeng Ho

doi:10.1016/j.jpcs.2004.06.016

Optical properties of GaNAs/GaAs triple quantum well structures

Yo Yu Chen, Jia Ren Lee, Meng Luan Weng, Chien Rong Lu^*, Bing Ruey Wu, Wen Jeng Ho

^*此作品的通信作者

物理學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

2 引文斯高帕斯（Scopus）

摘要

Optical properties of the GaNAs/GaAs triple quantum well structures were characterized by using photoreflectance and photoluminescence spectroscopy at different temperatures. The excitonic interband transitions of the triple quantum well systems were observed in the spectral range above hv=E _g(GaN_xAs_1-x). A matrix transfer algorithm was used to match the GaN_xAs_1-x/GaAs boundary conditions and calculate the triple quantum well subband energies numerically for theoretical comparison. The internal electric field in the system was extracted from Franz-Keldysh oscillations in the photoreflectance spectra. The influences of the annealing treatment on the transition energy and the internal electric field are also analyzed.

原文	英語
頁（從 - 到）	1857-1860
頁數	4
期刊	Journal of Physics and Chemistry of Solids
卷	65
發行號	11
DOIs	https://doi.org/10.1016/j.jpcs.2004.06.016
出版狀態	已發佈 - 2004 11月

ASJC Scopus subject areas

一般化學
一般材料科學
凝聚態物理學

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10.1016/j.jpcs.2004.06.016

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@article{cdb43f748f6a4e6191082fba298fbb02,

title = "Optical properties of GaNAs/GaAs triple quantum well structures",

abstract = "Optical properties of the GaNAs/GaAs triple quantum well structures were characterized by using photoreflectance and photoluminescence spectroscopy at different temperatures. The excitonic interband transitions of the triple quantum well systems were observed in the spectral range above hv=E g(GaNxAs1-x). A matrix transfer algorithm was used to match the GaNxAs1-x/GaAs boundary conditions and calculate the triple quantum well subband energies numerically for theoretical comparison. The internal electric field in the system was extracted from Franz-Keldysh oscillations in the photoreflectance spectra. The influences of the annealing treatment on the transition energy and the internal electric field are also analyzed.",

keywords = "A. Quantum wells, A. Semiconductors, D. Luminescence, D. Optical properties",

author = "Chen, {Yo Yu} and Lee, {Jia Ren} and Weng, {Meng Luan} and Lu, {Chien Rong} and Wu, {Bing Ruey} and Ho, {Wen Jeng}",

note = "Funding Information: Financial support from National Science Council and Taiwan Normal University is gratefully acknowledged.",

year = "2004",

month = nov,

doi = "10.1016/j.jpcs.2004.06.016",

language = "English",

volume = "65",

pages = "1857--1860",

journal = "Journal of Physics and Chemistry of Solids",

issn = "0022-3697",

publisher = "Elsevier Limited",

number = "11",

}

TY - JOUR

T1 - Optical properties of GaNAs/GaAs triple quantum well structures

AU - Chen, Yo Yu

AU - Lee, Jia Ren

AU - Weng, Meng Luan

AU - Lu, Chien Rong

AU - Wu, Bing Ruey

AU - Ho, Wen Jeng

N1 - Funding Information: Financial support from National Science Council and Taiwan Normal University is gratefully acknowledged.

PY - 2004/11

Y1 - 2004/11

N2 - Optical properties of the GaNAs/GaAs triple quantum well structures were characterized by using photoreflectance and photoluminescence spectroscopy at different temperatures. The excitonic interband transitions of the triple quantum well systems were observed in the spectral range above hv=E g(GaNxAs1-x). A matrix transfer algorithm was used to match the GaNxAs1-x/GaAs boundary conditions and calculate the triple quantum well subband energies numerically for theoretical comparison. The internal electric field in the system was extracted from Franz-Keldysh oscillations in the photoreflectance spectra. The influences of the annealing treatment on the transition energy and the internal electric field are also analyzed.

AB - Optical properties of the GaNAs/GaAs triple quantum well structures were characterized by using photoreflectance and photoluminescence spectroscopy at different temperatures. The excitonic interband transitions of the triple quantum well systems were observed in the spectral range above hv=E g(GaNxAs1-x). A matrix transfer algorithm was used to match the GaNxAs1-x/GaAs boundary conditions and calculate the triple quantum well subband energies numerically for theoretical comparison. The internal electric field in the system was extracted from Franz-Keldysh oscillations in the photoreflectance spectra. The influences of the annealing treatment on the transition energy and the internal electric field are also analyzed.

KW - A. Quantum wells

KW - A. Semiconductors

KW - D. Luminescence

KW - D. Optical properties

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DO - 10.1016/j.jpcs.2004.06.016

M3 - Article

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SN - 0022-3697

VL - 65

SP - 1857

EP - 1860

JO - Journal of Physics and Chemistry of Solids

JF - Journal of Physics and Chemistry of Solids

IS - 11

ER -

Optical properties of GaNAs/GaAs triple quantum well structures

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