Optical phonon localization in self-assembled Ge islands

Tzueng Rong Yang, Mykhaylo M. Dvoynenko*, H. H. Cheng

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

摘要

We present a Raman scattering study for self-organized Ge islands on Si substrate carried out at 10 K. By means of difference Raman spectroscopy technique, we have separated the Raman signals from the Ge islands and Si substrate. The wetting layer thickness and strain were estimated from the line width and frequency peak. The estimated wetting layer thickness values are comparative with the Ge dot height obtained from microscopy measurements. The strain is decreased with an increase of the thickness.

原文英語
頁(從 - 到)1302-1303
頁數2
期刊Physica B: Condensed Matter
329-333
發行號II
DOIs
出版狀態已發佈 - 2003 五月

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程

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