Optical characterization of InGaAsN/GaAsN/GaAs quantum wells with InGaP cladding layers

C. R. Lu*, H. L. Liu, J. R. Lee, C. H. Wu, H. H. Lin, L. W. Sung

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

2 引文 斯高帕斯(Scopus)

摘要

Optical properties of InGaAsN/GaAs and InGaAsN/GaAsN/GaAs quantum well structures with InGaP cladding layers were studied by photoreflectance at various temperatures. The excitonic interband transitions of the InGaAsN/GaAsN/GaAs QW systems were observed in the spectral range above hν=Eg(InGaAsN). The confinement potential of the system with strain compensating GaAsN barriers became one step broader, thus more quantum states and larger optical transition rate were observed. A matrix transfer algorithm was used to calculate the subband energies numerically. Band gap energies, effective masses were adopted from the band anti-crossing model with band-offset values adjusted to obtain the subband energies to best fit the observed optical transition features. A spectral feature below and near the GaAs band gap energy from GaAs barriers is enhanced by the GaAs/InGaP interface space charge accumulation induced internal field.

原文英語
頁(從 - 到)2082-2085
頁數4
期刊Journal of Physics and Chemistry of Solids
66
發行號11
DOIs
出版狀態已發佈 - 2005 十一月

ASJC Scopus subject areas

  • 化學 (全部)
  • 材料科學(全部)
  • 凝聚態物理學

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