摘要
Optical properties of InGaAsN/GaAs and InGaAsN/GaAsN/GaAs quantum well structures with InGaP cladding layers were studied by photoreflectance at various temperatures. The excitonic interband transitions of the InGaAsN/GaAsN/GaAs QW systems were observed in the spectral range above hν=Eg(InGaAsN). The confinement potential of the system with strain compensating GaAsN barriers became one step broader, thus more quantum states and larger optical transition rate were observed. A matrix transfer algorithm was used to calculate the subband energies numerically. Band gap energies, effective masses were adopted from the band anti-crossing model with band-offset values adjusted to obtain the subband energies to best fit the observed optical transition features. A spectral feature below and near the GaAs band gap energy from GaAs barriers is enhanced by the GaAs/InGaP interface space charge accumulation induced internal field.
原文 | 英語 |
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頁(從 - 到) | 2082-2085 |
頁數 | 4 |
期刊 | Journal of Physics and Chemistry of Solids |
卷 | 66 |
發行號 | 11 |
DOIs | |
出版狀態 | 已發佈 - 2005 11月 |
ASJC Scopus subject areas
- 一般化學
- 一般材料科學
- 凝聚態物理學