Optical characterization of Ge/Si superlattices with stacked nanoripples

J. R. Lee, S. C. Lin, Chien-Rong Lu, J. H. Lin, Chi-Ta Chia, H. H. Chang

研究成果: 雜誌貢獻文章

3 引文 (Scopus)

摘要

Optical properties of Ge/Si superlattices grown at low temperatures with strain-induced ripple structures were characterized by electroreflectance (ER) and resonance Raman spectroscopy. There were three types of samples under investigation. The growth temperatures of the Ge layers were 250, 300, and 350 °C. The diffusion length of Ge atom at such low temperatures is considerably smaller, and three-dimensional island growth is kinetically delayed or frozen out. The cross-sectional transmission electron microscope (TEM) image of the sample showed that strain-induced Ge/Si intermixing forms stacked SiGe-alloy ripples in the Si layers to release the strain in the Ge layers. When the Ge growth temperature decreases, the spectral feature of the Ge E1 transition is shifted and enhanced because the three-dimensional island growth is kinetically suppressed, the Ge/Si intermixing formation of strain relieving stacking ripples is in favor, and the optical transition is enhanced. The same optical transition and enhancement is confirmed by the resonance Raman spectroscopy.

原文英語
頁(從 - 到)490-492
頁數3
期刊Journal of Physics and Chemistry of Solids
69
發行號2-3
DOIs
出版狀態已發佈 - 2008 一月 1

指紋

Superlattices
superlattices
ripples
Optical transitions
Growth temperature
optical transition
Raman spectroscopy
relieving
diffusion length
Electron microscopes
Optical properties
electron microscopes
optical properties
Atoms
Temperature
temperature
augmentation
atoms

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

引用此文

Optical characterization of Ge/Si superlattices with stacked nanoripples. / Lee, J. R.; Lin, S. C.; Lu, Chien-Rong; Lin, J. H.; Chia, Chi-Ta; Chang, H. H.

於: Journal of Physics and Chemistry of Solids, 卷 69, 編號 2-3, 01.01.2008, p. 490-492.

研究成果: 雜誌貢獻文章

Lee, J. R. ; Lin, S. C. ; Lu, Chien-Rong ; Lin, J. H. ; Chia, Chi-Ta ; Chang, H. H. / Optical characterization of Ge/Si superlattices with stacked nanoripples. 於: Journal of Physics and Chemistry of Solids. 2008 ; 卷 69, 編號 2-3. 頁 490-492.
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AU - Lin, S. C.

AU - Lu, Chien-Rong

AU - Lin, J. H.

AU - Chia, Chi-Ta

AU - Chang, H. H.

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N2 - Optical properties of Ge/Si superlattices grown at low temperatures with strain-induced ripple structures were characterized by electroreflectance (ER) and resonance Raman spectroscopy. There were three types of samples under investigation. The growth temperatures of the Ge layers were 250, 300, and 350 °C. The diffusion length of Ge atom at such low temperatures is considerably smaller, and three-dimensional island growth is kinetically delayed or frozen out. The cross-sectional transmission electron microscope (TEM) image of the sample showed that strain-induced Ge/Si intermixing forms stacked SiGe-alloy ripples in the Si layers to release the strain in the Ge layers. When the Ge growth temperature decreases, the spectral feature of the Ge E1 transition is shifted and enhanced because the three-dimensional island growth is kinetically suppressed, the Ge/Si intermixing formation of strain relieving stacking ripples is in favor, and the optical transition is enhanced. The same optical transition and enhancement is confirmed by the resonance Raman spectroscopy.

AB - Optical properties of Ge/Si superlattices grown at low temperatures with strain-induced ripple structures were characterized by electroreflectance (ER) and resonance Raman spectroscopy. There were three types of samples under investigation. The growth temperatures of the Ge layers were 250, 300, and 350 °C. The diffusion length of Ge atom at such low temperatures is considerably smaller, and three-dimensional island growth is kinetically delayed or frozen out. The cross-sectional transmission electron microscope (TEM) image of the sample showed that strain-induced Ge/Si intermixing forms stacked SiGe-alloy ripples in the Si layers to release the strain in the Ge layers. When the Ge growth temperature decreases, the spectral feature of the Ge E1 transition is shifted and enhanced because the three-dimensional island growth is kinetically suppressed, the Ge/Si intermixing formation of strain relieving stacking ripples is in favor, and the optical transition is enhanced. The same optical transition and enhancement is confirmed by the resonance Raman spectroscopy.

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