Optical characterization and transport behaviors of LPMOCVD-grown InSb epitaxial films

T. R. Yang

doi:10.1016/S0921-4526(99)02622-8

Optical characterization and transport behaviors of LPMOCVD-grown InSb epitaxial films

T. R. Yang^*

^*此作品的通信作者

物理學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

4 引文斯高帕斯（Scopus）

摘要

InSb films were grown on GaAs substrates by low-pressure metalorganic chemical vapor deposition (LPMOCVD). Far-infrared (FIR) reflectance spectroscopy and Raman scattering has been used to study the lattice vibration behavior of these samples and the effects of III-V source ratios on the films crystalline quality to optimize the growth parameters. Lattice vibration modes were characterized. Film thickness, composition, stoichiometry and depth profiles were studied. The carrier concentration, mobility, effective mass as well as the dielectric behavior of these films are fitted by a model of dielectric response.

原文	英語
頁（從 - 到）	1189-1190
頁數	2
期刊	Physica B: Condensed Matter
卷	284-288
發行號	PART II
DOIs	https://doi.org/10.1016/S0921-4526(99)02622-8
出版狀態	已發佈 - 2000

ASJC Scopus subject areas

電子、光磁材料
凝聚態物理學
電氣與電子工程

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10.1016/S0921-4526(99)02622-8

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@article{32d9b8c50c75497d8e75f01c62cba3d4,

title = "Optical characterization and transport behaviors of LPMOCVD-grown InSb epitaxial films",

abstract = "InSb films were grown on GaAs substrates by low-pressure metalorganic chemical vapor deposition (LPMOCVD). Far-infrared (FIR) reflectance spectroscopy and Raman scattering has been used to study the lattice vibration behavior of these samples and the effects of III-V source ratios on the films crystalline quality to optimize the growth parameters. Lattice vibration modes were characterized. Film thickness, composition, stoichiometry and depth profiles were studied. The carrier concentration, mobility, effective mass as well as the dielectric behavior of these films are fitted by a model of dielectric response.",

keywords = "Far-infrared, InSb, Lattice vibration mode, Raman scattering",

author = "Yang, \{T. R.\}",

year = "2000",

doi = "10.1016/S0921-4526(99)02622-8",

language = "English",

volume = "284-288",

pages = "1189--1190",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier BV",

number = "PART II",

}

TY - JOUR

T1 - Optical characterization and transport behaviors of LPMOCVD-grown InSb epitaxial films

AU - Yang, T. R.

PY - 2000

Y1 - 2000

N2 - InSb films were grown on GaAs substrates by low-pressure metalorganic chemical vapor deposition (LPMOCVD). Far-infrared (FIR) reflectance spectroscopy and Raman scattering has been used to study the lattice vibration behavior of these samples and the effects of III-V source ratios on the films crystalline quality to optimize the growth parameters. Lattice vibration modes were characterized. Film thickness, composition, stoichiometry and depth profiles were studied. The carrier concentration, mobility, effective mass as well as the dielectric behavior of these films are fitted by a model of dielectric response.

AB - InSb films were grown on GaAs substrates by low-pressure metalorganic chemical vapor deposition (LPMOCVD). Far-infrared (FIR) reflectance spectroscopy and Raman scattering has been used to study the lattice vibration behavior of these samples and the effects of III-V source ratios on the films crystalline quality to optimize the growth parameters. Lattice vibration modes were characterized. Film thickness, composition, stoichiometry and depth profiles were studied. The carrier concentration, mobility, effective mass as well as the dielectric behavior of these films are fitted by a model of dielectric response.

KW - Far-infrared

KW - InSb

KW - Lattice vibration mode

KW - Raman scattering

UR - https://www.scopus.com/pages/publications/21244477488

UR - https://www.scopus.com/pages/publications/21244477488#tab=citedBy

U2 - 10.1016/S0921-4526(99)02622-8

DO - 10.1016/S0921-4526(99)02622-8

M3 - Article

AN - SCOPUS:21244477488

SN - 0921-4526

VL - 284-288

SP - 1189

EP - 1190

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - PART II

ER -

Optical characterization and transport behaviors of LPMOCVD-grown InSb epitaxial films

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